BTS307 E3062A

PROFET® BTS 307 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection • Fast demagnetization of inductive loads • Reverse battery protection1) • Open drain diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Vbb(AZ) Vbb(on) RON IL(ISO) 65 V 5.8 ... 58 V 250 mΩ 1.7 A TO-220AB/5 5 5 Standard 1 Straight leads 1 5 SMD Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for inductive loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + V bb Voltage Overvoltage Current Gate source protection limit protection 3 V Logic 2 Voltage Charge pump sensor Level shifter Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Limit for unclamped ind. loads Logic Load detection ST Short circuit detection GND  PROFET 1 Signal GND ) 1 Load GND With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Semiconductor Group 1 of 12 2003-Oct-01 BTS 307 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback 5 OUT (Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection2) Tj Start=-40 ...+150°C Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Electrostatic discharge capability (ESD) IN, ST: (Human Body Model) all other pins: Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Symbol Vbb Vbb IL Tj Tstg Ptot VESD VIN IIN IST Values 65 40 Unit V V self-limited -40 ...+150 -55 ...+150 50 1.0 tbd (>1.0) -0.5 ... +36 ±2.0 ±5.0 A °C W kV V mA see internal circuit diagrams page 5 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC junction - ambient (free air): 2) RthJA min --- Values typ max -2.5 -75 Unit K/W Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with higher Vbb. Semiconductor Group 2 2003-Oct-01 BTS 307 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A, Vbb = 24 V Tj=25 °C: RON Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=32 V, VIN= 0, see diagram page 6 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω, Vbb = 20V, Tj =-40...+150°C Slew rate on, 10 to 30% VOUT, RL = 12 Ω, Vbb = 20V, Tj =-40...+150°C Slew rate off, 10 to 30% VOUT, RL = 12 Ω, Vbb = 20V, Tj =-40...+150°C Operating Parameters Operating voltage 3) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 10 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage protection4) Tj =-40...+150°C: Ibb=40 mA Standby current (pin 3), VIN=0 Tj=-40...+150°C: 5) Operating current (Pin 1) , VIN=5 V ) 3 4) ) 5 IL(ISO) IL(GNDhigh) -- 220 250 500 1.4 390 1.7 mΩ -- -- -1.1 15 20 --- 80 70 µs dV /dton -- -- 6 V/µs -dV/dtoff -- -- 7 V/µs Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) 5.8 2.7 --- ---5.6 58 4.7 4.9 7.5 V V V V -- 0.4 -- V 65 70 -- V ton toff ∆Vbb(under) Vbb(AZ) µA Ibb(off) IGND A mA --- 10 2.2 50 -- mA At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 6. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 2003-Oct-01 BTS 307 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions6) Initial peak short circuit current limit (pin 3 to 5) Tj =-40°C: Tj =25°C: =+150°C: Tj Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150°C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 7) Values min typ max Unit IL(SCp) --4.0 -10 -- 19 --- A 59 150 --- --10 -- 75 --32 V °C K V -- 6 -- µA 2.4 3 4 V V VON(SC) -- 2.5 -- RI -- 20 -- kΩ VIN(T+) VIN(T-) ∆ VIN(T) IIN(off) 1 0.8 -1 --0.5 -- 2.5 --30 V V V µA On state input current (pin 2), VIN = 3.5? V IIN(on) 10 25 70 µA Delay time for status with open load td(ST OL3) -- 200 -- µs Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low) 5.4 -- 6.1 -- -0.4 V Diagnostic Characteristics Open load detection current IL(off) (included in standby current Ibb(off)) Open load detection voltage Short circuit detection voltage (pin 3 to 5) VON(CL) Tjt ∆Tjt -Vbb Tj=-40..150°C: VOUT(OL) Input and Status Feedback8) Input resistance see circuit page 5 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V after Input neg. slope (see diagram page 10) 6) ) 7 8) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 6). If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 4 2003-Oct-01 BTS 307 Truth Table Input- Output level level Normal operation Open load Status BTS 307 BTS 707 L L L H H H 9 ) L H H H H L L L H L L L H H H H H L L L H L L L L L H L L no overvoltage shutdown, see normal operation Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 10) Terms Status output +5V Ibb 3 I IN 2 IL V IN VST OUT PROFET I ST V R ST(ON) Vbb IN 4 5 ST GND GND 1 bb R IGND IN ESDZD ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 0 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). VOUT GND Input circuit (ESD protection) R ST VON Short circuit detection Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by the PROFET itself, external switch off recommended! I + V bb ESD-ZD I I I V ON GND OUT ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). ) 9 Logic unit Short circuit detection Power Transistor off, high impedance, internal pull up current source for open load detection. Semiconductor Group 5 2003-Oct-01 BTS 307 GND disconnect Inductive and overvoltage output clamp + V bb V 3 +5V Z VON 12k V bb OUT 5 ST 4 PROFET Vbb PROFET OUT GND IN 2 GND 1 V IN VST V GND VON clamped to -- V typ. For Vbb=24V and VIN=0V: VST>2.8V @ IST ≥ 0 if pulled up as shown. Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Overvolt. and reverse batt. protection GND disconnect with GND pull up + V bb V R IN IN RI 3 Z2 2 IN Logic R ST PROFET ST V Vbb 4 5 ST GND PROFET Z1 OUT 1 GND R GND V V bb V IN ST V GND Signal GND VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 Ω, RST= 15 kΩ, RI= 20 kΩ typ. Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low 3 high 2 IN Vbb PROFET 4 OFF I 5 ST GND 1 L(OL) V Logic unit OUT Open load detection V OUT bb Normal load current can be handled by the PROFET itself. Signal GND Semiconductor Group 6 2003-Oct-01 BTS 307 Inductive Load switch-off energy dissipation Vbb disconnect with charged external inductive load high 2 S 3 IN Vbb E AS IN PROFET 4 E bb OUT 5 D PROFET ST = GND OUT ST GND 1 V ELoad Vbb ZL bb If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. { L RL EL ER Energy stored in load inductance: 2 EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= Semiconductor Group 7 IL· L IL·RL ·(Vbb + |VOUT(CL)|)· ln (1+ ) |VOUT(CL)| 2·RL 2003-Oct-01 BTS 307 Options Overview all versions: High-side switch, Input protection, ESD protectionand reverse battery protection with 150 Ω in GND connection, protection against loss of ground Type Logic version BTS 410D2 410E2 410G2 410H2 Overtemperature protection with hysteresis Tj >150 °C, latch function10)11) Tj >150 °C, with auto-restart on cooling Short circuit to GND protection D E G X X X X X X X 308 H X switches off when VON>3.5 V typ. and Vbb> 8 V typ10) (when first turned on after approx. 150 µs) switches off when VON>8.5 V typ.10) (when first turned on after approx. 150 µs) 307 X X X Achieved through overtemperature protection X Open load detection in OFF-state with sensing current 6 µA typ. in ON-state with sensing voltage drop across power transistor X X X X X X Undervoltage shutdown with auto restart X X X X X X Overvoltage shutdown with auto restart X X X X - X overtemperature X X X X X X short circuit to GND X X - X X X -12) 12) -12) X X X Status feedback for short to Vbb - open load X X X X X X undervoltage X - - - X - overvoltage X - - - - - X X X X X X X X X X X X X X X X X X X X X Status output type CMOS X Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) Protection against loss of GND X X ) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V OUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 11) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 12) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection 10 Semiconductor Group 8 2003-Oct-01 BTS 307 Timing diagrams Figure 3a: Short circuit: shut down by overtempertature, reset by cooling Figure 1a: Vbb turn on, : IN IN V V OUT t d(bb IN) V bb normal operation I OUT Output short to GND I L L(SCp) I L(SCr) A ST open drain A ST t t in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs Figure 2a: Switching an inductive load, Figure 4a: Overtemperature: Reset if Tj